TPN22006NH,LQ
| Manufacturer Part Number | TPN22006NH,LQ |
|---|---|
| Manufacturer | Toshiba Semiconductor and Storage |
| Detailed Description | MOSFET N-CH 60V 9A 8TSON |
| Package | 8-TSON Advance (3.3x3.3) |
| In Stock | 207170 pcs |
| Data sheet |
Reference Price (In US Dollars)
| 1 | 10 | 100 | 500 | 1000 |
|---|---|---|---|---|
| $0.377 | $0.333 | $0.255 | $0.202 | $0.161 |
Delivery Time
Components-House.com is a Reliable Stocking Distributor of Electronic Parts. We specialize in all Toshiba Semiconductor and Storage series electronic components. We have 207170 pieces of Toshiba Semiconductor and Storage TPN22006NH,LQ in stock available now. Request a quote from electronics components distributor at Components-House.com, our sales team will contact you within 24 hours.
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RFQ Email: info@Components-House.net
Specifications
| Product Attribute | Attribute Value |
|---|---|
| Vgs(th) (Max) @ Id | 4V @ 100µA |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Supplier Device Package | 8-TSON Advance (3.3x3.3) |
| Series | U-MOSVIII-H |
| Rds On (Max) @ Id, Vgs | 22mOhm @ 4.5A, 10V |
| Power Dissipation (Max) | 700mW (Ta), 18W (Tc) |
| Package / Case | 8-PowerVDFN |
| Package | Tape & Reel (TR) |
| Operating Temperature | 150°C (TJ) |
| Product Attribute | Attribute Value |
|---|---|
| Mounting Type | Surface Mount |
| Input Capacitance (Ciss) (Max) @ Vds | 710 pF @ 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 10 V |
| FET Type | N-Channel |
| FET Feature | - |
| Drive Voltage (Max Rds On, Min Rds On) | 6.5V, 10V |
| Drain to Source Voltage (Vdss) | 60 V |
| Current - Continuous Drain (Id) @ 25°C | 9A (Ta) |
| Base Product Number | TPN22006 |
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