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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Arrays, Pre-Biased > RN1970(TE85L,F)
Toshiba Semiconductor and Storage

RN1970(TE85L,F)

Manufacturer Part Number RN1970(TE85L,F)
Manufacturer Toshiba Semiconductor and Storage
Detailed Description TRANS 2NPN PREBIAS 0.2W US6
Package US6
In Stock 1214783 pcs
Data sheet
Reference Price (In US Dollars)
1 10 100 500 1000
$0.182 $0.135 $0.077 $0.051 $0.039
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Specifications

Product Attribute Attribute Value
Voltage - Collector Emitter Breakdown (Max) 50V
Vce Saturation (Max) @ Ib, Ic 300mV @ 250µA, 5mA
Transistor Type 2 NPN - Pre-Biased (Dual)
Supplier Device Package US6
Series -
Resistor - Emitter Base (R2) -
Resistor - Base (R1) 4.7kOhms
Power - Max 200mW
Product Attribute Attribute Value
Package / Case 6-TSSOP, SC-88, SOT-363
Package Tape & Reel (TR)
Mounting Type Surface Mount
Frequency - Transition 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 1mA, 5V
Current - Collector Cutoff (Max) 100nA (ICBO)
Current - Collector (Ic) (Max) 100mA
Base Product Number RN1970

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RN1970(TE85L,F) Datasheet PDF