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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Arrays, Pre-Biased > RN1911FETE85LF
Toshiba Semiconductor and Storage

RN1911FETE85LF

Manufacturer Part Number RN1911FETE85LF
Manufacturer Toshiba Semiconductor and Storage
Detailed Description TRANS 2NPN PREBIAS 0.1W ES6
Package ES6
In Stock 4958 pcs
Data sheet
Reference Price (In US Dollars)
Delivery Time Components-House.com is a Reliable Stocking Distributor of Electronic Parts. We specialize in all Toshiba Semiconductor and Storage series electronic components. We have 4958 pieces of Toshiba Semiconductor and Storage RN1911FETE85LF in stock available now. Request a quote from electronics components distributor at Components-House.com, our sales team will contact you within 24 hours.
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Specifications

Product Attribute Attribute Value
Voltage - Collector Emitter Breakdown (Max) 50V
Vce Saturation (Max) @ Ib, Ic 300mV @ 250µA, 5mA
Transistor Type 2 NPN - Pre-Biased (Dual)
Supplier Device Package ES6
Series -
Resistor - Emitter Base (R2) -
Resistor - Base (R1) 10kOhms
Power - Max 100mW
Product Attribute Attribute Value
Package / Case SOT-563, SOT-666
Package Tape & Reel (TR)
Mounting Type Surface Mount
Frequency - Transition 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 1mA, 5V
Current - Collector Cutoff (Max) 100nA (ICBO)
Current - Collector (Ic) (Max) 100mA
Base Product Number RN1911

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RN1911FETE85LF Datasheet PDF