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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Arrays, Pre-Biased > RN1910FE,LF(CT
Toshiba Semiconductor and Storage

RN1910FE,LF(CT

Manufacturer Part Number RN1910FE,LF(CT
Manufacturer Toshiba Semiconductor and Storage
Detailed Description TRANS 2NPN PREBIAS 0.1W ES6
Package ES6
In Stock 2007967 pcs
Data sheet Marking Chg 08/Feb/2016
Reference Price (In US Dollars)
1 10 100 500 1000 2000
$0.102 $0.083 $0.044 $0.029 $0.02 $0.018
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Specifications

Product Attribute Attribute Value
Voltage - Collector Emitter Breakdown (Max) 50V
Vce Saturation (Max) @ Ib, Ic 300mV @ 250µA, 5mA
Transistor Type 2 NPN - Pre-Biased (Dual)
Supplier Device Package ES6
Series -
Resistor - Emitter Base (R2) -
Resistor - Base (R1) 4.7kOhms
Power - Max 100mW
Product Attribute Attribute Value
Package / Case SOT-563, SOT-666
Package Tape & Reel (TR)
Mounting Type Surface Mount
Frequency - Transition 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 1mA, 5V
Current - Collector Cutoff (Max) 100nA (ICBO)
Current - Collector (Ic) (Max) 100mA
Base Product Number RN1910

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RN1910FE,LF(CT Datasheet PDF

Data sheet