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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Arrays, Pre-Biased > RN1968FE(TE85L,F)
Toshiba Semiconductor and Storage

RN1968FE(TE85L,F)

Manufacturer Part Number RN1968FE(TE85L,F)
Manufacturer Toshiba Semiconductor and Storage
Detailed Description TRANS 2NPN PREBIAS 0.1W ES6
Package ES6
In Stock 4475 pcs
Data sheet EOL_X34_Oct_2014 Oct/2014RN1967FE-69FE
Reference Price (In US Dollars)
Delivery Time Components-House.com is a Reliable Stocking Distributor of Electronic Parts. We specialize in all Toshiba Semiconductor and Storage series electronic components. We have 4475 pieces of Toshiba Semiconductor and Storage RN1968FE(TE85L,F) in stock available now. Request a quote from electronics components distributor at Components-House.com, our sales team will contact you within 24 hours.
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Specifications

Product Attribute Attribute Value
Voltage - Collector Emitter Breakdown (Max) 50V
Vce Saturation (Max) @ Ib, Ic 300mV @ 250µA, 5mA
Transistor Type 2 NPN - Pre-Biased (Dual)
Supplier Device Package ES6
Series -
Resistor - Emitter Base (R2) 47kOhms
Resistor - Base (R1) 22kOhms
Power - Max 100mW
Product Attribute Attribute Value
Package / Case SOT-563, SOT-666
Package Tape & Reel (TR)
Mounting Type Surface Mount
Frequency - Transition 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA, 5V
Current - Collector Cutoff (Max) 100nA (ICBO)
Current - Collector (Ic) (Max) 100mA
Base Product Number RN1968

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RN1968FE(TE85L,F) Datasheet PDF

Data sheet