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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Arrays > MSCSM120HRM052NG
Microchip Technology

MSCSM120HRM052NG

Manufacturer Part Number MSCSM120HRM052NG
Manufacturer Microchip Technology
Detailed Description PM-MOSFET-SIC-SP6C
Package Module
In Stock 102 pcs
Data sheet
Reference Price (In US Dollars)
1
$356.52
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Specifications

Product Attribute Attribute Value
Vgs(th) (Max) @ Id 2.8V @ 18mA, 2.4V @ 16mA
Technology Silicon Carbide (SiC)
Supplier Device Package -
Series -
Rds On (Max) @ Id, Vgs 5.2mOhm @ 240A, 20V, 4.8mOhm @ 160A, 20V
Power - Max 1.846kW (Tc), 1.161kW (Tc)
Package / Case Module
Package Bulk
Product Attribute Attribute Value
Operating Temperature -40°C ~ 175°C (TJ)
Mounting Type Chassis Mount
Input Capacitance (Ciss) (Max) @ Vds 18100pF @ 1000V, 18000pF @ 700V
Gate Charge (Qg) (Max) @ Vgs 1392nC @ 20V, 860nC @ 20V
FET Feature Silicon Carbide (SiC)
Drain to Source Voltage (Vdss) 1200V (1.2kV), 700V
Current - Continuous Drain (Id) @ 25°C 472A (Tc), 442A (Tc)
Configuration 4 N-Channel (Three Level Inverter)

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MSCSM120HRM052NG Datasheet PDF

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