MSCSM120HRM08NG
Manufacturer Part Number | MSCSM120HRM08NG |
---|---|
Manufacturer | Microchip Technology |
Detailed Description | PM-MOSFET-SIC-SP6C |
Package | Module |
In Stock | 175 pcs |
Data sheet |
Reference Price (In US Dollars)
1 |
---|
$258.364 |
Delivery Time
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Specifications
Product Attribute | Attribute Value |
---|---|
Vgs(th) (Max) @ Id | 2.8V @ 12mA, 2.4V @ 8mA |
Technology | Silicon Carbide (SiC) |
Supplier Device Package | - |
Series | - |
Rds On (Max) @ Id, Vgs | 7.8mOhm @ 160A, 20V, 9.5mOhm @ 80A, 20V |
Power - Max | 1.253kW (Tc), 613W (Tc) |
Package / Case | Module |
Package | Bulk |
Product Attribute | Attribute Value |
---|---|
Operating Temperature | -40°C ~ 175°C (TJ) |
Mounting Type | Chassis Mount |
Input Capacitance (Ciss) (Max) @ Vds | 12100pF @ 1000V, 9000pF @ 700V |
Gate Charge (Qg) (Max) @ Vgs | 928nC @ 20V, 430nC @ 20V |
FET Feature | Silicon Carbide (SiC) |
Drain to Source Voltage (Vdss) | 1200V (1.2kV), 700V |
Current - Continuous Drain (Id) @ 25°C | 317A (Tc), 227A (Tc) |
Configuration | 4 N-Channel (Three Level Inverter) |
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