MSCSM120DAM31CTBL1NG
Manufacturer Part Number | MSCSM120DAM31CTBL1NG |
---|---|
Manufacturer | Microchip Technology |
Detailed Description | PM-MOSFET-SIC-SBD-BL1 |
Package | Module |
In Stock | 1258 pcs |
Data sheet | Microchip CA Prop65Microchip REACHMicrochip RoHSAssembly Site 16/Feb/2023MSCSM120DAM31CTBL1NG |
Reference Price (In US Dollars)
1 | 100 |
---|---|
$48.211 | $36.64 |
Delivery Time
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Specifications
Product Attribute | Attribute Value |
---|---|
Vgs(th) (Max) @ Id | 2.8V @ 1mA |
Vgs (Max) | +25V, -10V |
Technology | SiCFET (Silicon Carbide) |
Supplier Device Package | - |
Series | - |
Rds On (Max) @ Id, Vgs | 31mOhm @ 40A, 20V |
Power Dissipation (Max) | 310W |
Package / Case | Module |
Package | Bulk |
Operating Temperature | -55°C ~ 175°C (TJ) |
Product Attribute | Attribute Value |
---|---|
Mounting Type | Chassis Mount |
Input Capacitance (Ciss) (Max) @ Vds | 3020 pF @ 1000 V |
Gate Charge (Qg) (Max) @ Vgs | 232 nC @ 20 V |
FET Type | N-Channel |
FET Feature | - |
Drive Voltage (Max Rds On, Min Rds On) | 20V |
Drain to Source Voltage (Vdss) | 1200 V |
Current - Continuous Drain (Id) @ 25°C | 79A |
Base Product Number | MSCSM120 |
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