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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Arrays > MSCSM120HM31TBL2NG
Microchip Technology

MSCSM120HM31TBL2NG

Manufacturer Part Number MSCSM120HM31TBL2NG
Manufacturer Microchip Technology
Detailed Description PM-MOSFET-SIC-BL2
Package Module
In Stock 413 pcs
Data sheet Microchip CA Prop65Microchip REACHMicrochip RoHSAssembly Site 16/Feb/2023MSCSM120HM31TBL2NG
Reference Price (In US Dollars)
1
$100.862
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Specifications

Product Attribute Attribute Value
Vgs(th) (Max) @ Id 2.8V @ 3mA
Technology Silicon Carbide (SiC)
Supplier Device Package -
Series -
Rds On (Max) @ Id, Vgs 31mOhm @ 40A, 20V
Power - Max 310W
Package / Case Module
Package Bulk
Operating Temperature -55°C ~ 175°C (TJ)
Product Attribute Attribute Value
Mounting Type Chassis Mount
Input Capacitance (Ciss) (Max) @ Vds 3020pF @ 1000V
Gate Charge (Qg) (Max) @ Vgs 232nC @ 20V
FET Feature -
Drain to Source Voltage (Vdss) 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C 79A
Configuration 4 N-Channel (Full Bridge)
Base Product Number MSCSM120

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MSCSM120HM31TBL2NG Datasheet PDF

Data sheet