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Specifications
Product Attribute
Attribute Value
Vgs(th) (Max) @ Id
3.7V @ 250µA
Vgs (Max)
±20V
Technology
MOSFET (Metal Oxide)
Supplier Device Package
TO-220AB
Series
HEXFET®, StrongIRFET™
Rds On (Max) @ Id, Vgs
2mOhm @ 100A, 10V
Power Dissipation (Max)
375W (Tc)
Package / Case
TO-220-3
Package
Tube
Operating Temperature
-55°C ~ 175°C (TJ)
Product Attribute
Attribute Value
Mounting Type
Through Hole
Input Capacitance (Ciss) (Max) @ Vds
13703 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs
411 nC @ 10 V
FET Type
N-Channel
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
195A (Tc)
Base Product Number
IRFB7530
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