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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > IRFB4610PBF
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IRFB4610PBF

Reference Price (In US Dollars)
1 10 100 500 1000 2000 5000
$0.892 $0.801 $0.644 $0.529 $0.438 $0.408 $0.393
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Specifications

Product Attribute Attribute Value
Vgs(th) (Max) @ Id 4V @ 100µA
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
Supplier Device Package TO-220AB
Series HEXFET®
Rds On (Max) @ Id, Vgs 14mOhm @ 44A, 10V
Power Dissipation (Max) 190W (Tc)
Package / Case TO-220-3
Package Tube
Operating Temperature -55°C ~ 175°C (TJ)
Product Attribute Attribute Value
Mounting Type Through Hole
Input Capacitance (Ciss) (Max) @ Vds 3550 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs 140 nC @ 10 V
FET Type N-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 10V
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 73A (Tc)
Base Product Number IRFB4610

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IRFB4610PBF Datasheet PDF

Data sheet