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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > IRFB812PBF
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IRFB812PBF

Manufacturer Part Number IRFB812PBF
Manufacturer Infineon Technologies
Detailed Description MOSFET N CH 500V 3.6A TO220AB
Package TO-220AB
In Stock 3902 pcs
Data sheet Mult Dev Label Chgs 8/Sep/2021IR Part Numbering SystemMult Dev Wafer Site Chg 18/Dec/2020Package Drawing Update 19/Aug/2015IRFB812PBF EOL 11/Mar/2021
Reference Price (In US Dollars)
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Specifications

Product Attribute Attribute Value
Vgs(th) (Max) @ Id 5V @ 250µA
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
Supplier Device Package TO-220AB
Series HEXFET®
Rds On (Max) @ Id, Vgs 2.2Ohm @ 2.2A, 10V
Power Dissipation (Max) 78W (Tc)
Package / Case TO-220-3
Package Tube
Operating Temperature -55°C ~ 150°C (TJ)
Product Attribute Attribute Value
Mounting Type Through Hole
Input Capacitance (Ciss) (Max) @ Vds 810 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs 20 nC @ 10 V
FET Type N-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 10V
Drain to Source Voltage (Vdss) 500 V
Current - Continuous Drain (Id) @ 25°C 3.6A (Tc)
Base Product Number IRFB812

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IRFB812PBF Datasheet PDF

Data sheet

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