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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > IRFB4510PBF
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IRFB4510PBF

Reference Price (In US Dollars)
1 10 100 500 1000 2000 5000 10000
$0.509 $0.455 $0.355 $0.293 $0.231 $0.216 $0.205 $0.197
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Specifications

Product Attribute Attribute Value
Vgs(th) (Max) @ Id 4V @ 100µA
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
Supplier Device Package TO-220AB
Series HEXFET®
Rds On (Max) @ Id, Vgs 13.5mOhm @ 37A, 10V
Power Dissipation (Max) 140W (Tc)
Package / Case TO-220-3
Package Tube
Operating Temperature -55°C ~ 175°C (TJ)
Product Attribute Attribute Value
Mounting Type Through Hole
Input Capacitance (Ciss) (Max) @ Vds 3180 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs 87 nC @ 10 V
FET Type N-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 10V
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 62A (Tc)
Base Product Number IRFB4510

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IRFB4510PBF Datasheet PDF

Data sheet