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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > IRFB4229PBF
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IRFB4229PBF

Reference Price (In US Dollars)
1 10 100 500 1000 2000
$1.61 $1.445 $1.184 $1.008 $0.85 $0.807
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Specifications

Product Attribute Attribute Value
Vgs(th) (Max) @ Id 5V @ 250µA
Vgs (Max) ±30V
Technology MOSFET (Metal Oxide)
Supplier Device Package TO-220AB
Series HEXFET®
Rds On (Max) @ Id, Vgs 46mOhm @ 26A, 10V
Power Dissipation (Max) 330W (Tc)
Package / Case TO-220-3
Package Tube
Operating Temperature -40°C ~ 175°C (TJ)
Product Attribute Attribute Value
Mounting Type Through Hole
Input Capacitance (Ciss) (Max) @ Vds 4560 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs 110 nC @ 10 V
FET Type N-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 10V
Drain to Source Voltage (Vdss) 250 V
Current - Continuous Drain (Id) @ 25°C 46A (Tc)
Base Product Number IRFB4229

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IRFB4229PBF Datasheet PDF

Data sheet