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IRFB4110PBF
Reference Price (In US Dollars)
1
10
100
500
1000
2000
$1.746
$1.567
$1.284
$1.093
$0.922
$0.876
Delivery Time
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Specifications
Product Attribute
Attribute Value
Vgs(th) (Max) @ Id
4V @ 250µA
Vgs (Max)
±20V
Technology
MOSFET (Metal Oxide)
Supplier Device Package
TO-220AB
Series
HEXFET®
Rds On (Max) @ Id, Vgs
4.5mOhm @ 75A, 10V
Power Dissipation (Max)
370W (Tc)
Package / Case
TO-220-3
Package
Tube
Operating Temperature
-55°C ~ 175°C (TJ)
Product Attribute
Attribute Value
Mounting Type
Through Hole
Input Capacitance (Ciss) (Max) @ Vds
9620 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs
210 nC @ 10 V
FET Type
N-Channel
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
10V
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
120A (Tc)
Base Product Number
IRFB4110
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IRFB4110PBF Datasheet PDF
Data sheet
Datasheet File Browse
