IPB65R110CFDAATMA1
| Manufacturer Part Number | IPB65R110CFDAATMA1 |
|---|---|
| Manufacturer | Infineon Technologies |
| Detailed Description | MOSFET N-CH 650V 31.2A D2PAK |
| Package | PG-TO263-3 |
| In Stock | 19568 pcs |
| Data sheet | Part Number GuideMult Dev Pkg Box Chg 3/Jan/2018Mult Dev Wafer Chg 26/Jun/2020 |
Reference Price (In US Dollars)
| 1 | 10 | 100 | 500 |
|---|---|---|---|
| $2.957 | $2.672 | $2.212 | $1.927 |
Delivery Time
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RFQ Email: info@Components-House.net
RFQ Email: info@Components-House.net
Specifications
| Product Attribute | Attribute Value |
|---|---|
| Vgs(th) (Max) @ Id | 4.5V @ 1.3mA |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Supplier Device Package | PG-TO263-3 |
| Series | Automotive, AEC-Q101, CoolMOS™ |
| Rds On (Max) @ Id, Vgs | 110mOhm @ 12.7A, 10V |
| Power Dissipation (Max) | 277.8W (Tc) |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Package | Tape & Reel (TR) |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Product Attribute | Attribute Value |
|---|---|
| Mounting Type | Surface Mount |
| Input Capacitance (Ciss) (Max) @ Vds | 3240 pF @ 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 118 nC @ 10 V |
| FET Type | N-Channel |
| FET Feature | - |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Drain to Source Voltage (Vdss) | 650 V |
| Current - Continuous Drain (Id) @ 25°C | 31.2A (Tc) |
| Base Product Number | IPB65R110 |
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