IPB65R099C6ATMA1
| Manufacturer Part Number | IPB65R099C6ATMA1 |
|---|---|
| Manufacturer | Infineon Technologies |
| Detailed Description | MOSFET N-CH 650V 38A D2PAK |
| Package | PG-TO263-3 |
| In Stock | 6314 pcs |
| Data sheet | Part Number GuideMult Dev Pkg Box Chg 3/Jan/2018Mult Devices EOL 31/Aug/2017Mult Devices Retraction 31/Aug/2017 |
Reference Price (In US Dollars)
Delivery Time
Components-House.com is a Reliable Stocking Distributor of Electronic Parts. We specialize in all Infineon Technologies series electronic components. We have 6314 pieces of Infineon Technologies IPB65R099C6ATMA1 in stock available now. Request a quote from electronics components distributor at Components-House.com, our sales team will contact you within 24 hours.
RFQ Email: info@Components-House.net
RFQ Email: info@Components-House.net
Specifications
| Product Attribute | Attribute Value |
|---|---|
| Vgs(th) (Max) @ Id | 3.5V @ 1.2mA |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Supplier Device Package | PG-TO263-3 |
| Series | CoolMOS™ |
| Rds On (Max) @ Id, Vgs | 99mOhm @ 12.8A, 10V |
| Power Dissipation (Max) | 278W (Tc) |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Package | Tape & Reel (TR) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Product Attribute | Attribute Value |
|---|---|
| Mounting Type | Surface Mount |
| Input Capacitance (Ciss) (Max) @ Vds | 2780 pF @ 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 127 nC @ 10 V |
| FET Type | N-Channel |
| FET Feature | - |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Drain to Source Voltage (Vdss) | 650 V |
| Current - Continuous Drain (Id) @ 25°C | 38A (Tc) |
| Base Product Number | IPB65R099 |
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