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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > IPB60R385CP
Infineon Technologies

IPB60R385CP

Manufacturer Part Number IPB60R385CP
Manufacturer Infineon Technologies
Detailed Description N-CHANNEL POWER MOSFET
Package PG-TO263-3-2
In Stock 4518 pcs
Data sheet
Reference Price (In US Dollars)
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Specifications

Product Attribute Attribute Value
Vgs(th) (Max) @ Id 3.5V @ 340µA
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
Supplier Device Package PG-TO263-3-2
Series CoolMOS™
Rds On (Max) @ Id, Vgs 385mOhm @ 5.2A, 10V
Power Dissipation (Max) 83W (Tc)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Package Bulk
Product Attribute Attribute Value
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Input Capacitance (Ciss) (Max) @ Vds 790 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs 22 nC @ 10 V
FET Type N-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 10V
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 9A (Tc)

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IPB60R385CP Datasheet PDF