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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > IPB65R190C7ATMA1
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IPB65R190C7ATMA1

Manufacturer Part Number IPB65R190C7ATMA1
Manufacturer Infineon Technologies
Detailed Description MOSFET N-CH 650V 13A D2PAK
Package PG-TO263-3
In Stock 6415 pcs
Data sheet Part Number GuideMult Dev Pkg Box Chg 3/Jan/2018Mult Dev Wafer/MPN Chgs 17/May/2018Mult Dev OBS 8/Feb/2019
Reference Price (In US Dollars)
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Specifications

Product Attribute Attribute Value
Vgs(th) (Max) @ Id 4V @ 290µA
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
Supplier Device Package PG-TO263-3
Series CoolMOS™ C7
Rds On (Max) @ Id, Vgs 190mOhm @ 5.7A, 10V
Power Dissipation (Max) 72W (Tc)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Package Tape & Reel (TR)
Operating Temperature -55°C ~ 150°C (TJ)
Product Attribute Attribute Value
Mounting Type Surface Mount
Input Capacitance (Ciss) (Max) @ Vds 1150 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs 23 nC @ 10 V
FET Type N-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 10V
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 13A (Tc)
Base Product Number IPB65R

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IPB65R190C7ATMA1 Datasheet PDF

Data sheet

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