IPB60R180P7ATMA1
Manufacturer Part Number | IPB60R180P7ATMA1 |
---|---|
Manufacturer | Infineon Technologies |
Detailed Description | MOSFET N-CH 600V 18A D2PAK |
Package | PG-TO263-3 |
In Stock | 69581 pcs |
Data sheet | Mult Dev Pkg Box Chg 3/Jan/2018Mult Dev Wafer Site Add 10/Mar/2021 |
Reference Price (In US Dollars)
1 | 10 | 100 | 500 |
---|---|---|---|
$1.071 | $0.962 | $0.788 | $0.671 |
Delivery Time
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RFQ Email: info@Components-House.net
RFQ Email: info@Components-House.net
Specifications
Product Attribute | Attribute Value |
---|---|
Vgs(th) (Max) @ Id | 4V @ 280µA |
Vgs (Max) | ±20V |
Technology | MOSFET (Metal Oxide) |
Supplier Device Package | PG-TO263-3 |
Series | CoolMOS™ P7 |
Rds On (Max) @ Id, Vgs | 180mOhm @ 5.6A, 10V |
Power Dissipation (Max) | 72W (Tc) |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Package | Tape & Reel (TR) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Product Attribute | Attribute Value |
---|---|
Mounting Type | Surface Mount |
Input Capacitance (Ciss) (Max) @ Vds | 1081 pF @ 400 V |
Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 10 V |
FET Type | N-Channel |
FET Feature | - |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Drain to Source Voltage (Vdss) | 600 V |
Current - Continuous Drain (Id) @ 25°C | 18A (Tc) |
Base Product Number | IPB60R180 |
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