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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > IPB60R080P7ATMA1
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IPB60R080P7ATMA1

Manufacturer Part Number IPB60R080P7ATMA1
Manufacturer Infineon Technologies
Detailed Description MOSFET N-CH 600V 37A D2PAK
Package PG-TO263-3
In Stock 32414 pcs
Data sheet Mult Dev Pkg Box Chg 3/Jan/2018Mult Dev Wafer Site Add 10/Mar/2021
Reference Price (In US Dollars)
1 10 100 500
$2.21 $1.986 $1.627 $1.385
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Specifications

Product Attribute Attribute Value
Vgs(th) (Max) @ Id 4V @ 590µA
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
Supplier Device Package PG-TO263-3
Series CoolMOS™ P7
Rds On (Max) @ Id, Vgs 80mOhm @ 11.8A, 10V
Power Dissipation (Max) 129W (Tc)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Package Tape & Reel (TR)
Operating Temperature -55°C ~ 150°C (TJ)
Product Attribute Attribute Value
Mounting Type Surface Mount
Input Capacitance (Ciss) (Max) @ Vds 2180 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs 51 nC @ 10 V
FET Type N-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 10V
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 37A (Tc)
Base Product Number IPB60R080

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IPB60R080P7ATMA1 Datasheet PDF

Data sheet