IPB50N12S3L15ATMA1
Manufacturer Part Number | IPB50N12S3L15ATMA1 |
---|---|
Manufacturer | Infineon Technologies |
Detailed Description | MOSFET N-CHANNEL_100+ |
Package | PG-TO263-3-2 |
In Stock | 6852 pcs |
Data sheet | Part Number GuideMult Dev Pkg Box Chg 3/Jan/2018Mult Dev EOL 30/Sep/2022Wafer Test Add 27/Apr/2017 |
Reference Price (In US Dollars)
Delivery Time
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Specifications
Product Attribute | Attribute Value |
---|---|
Vgs(th) (Max) @ Id | 2.4V @ 60µA |
Vgs (Max) | ±20V |
Technology | MOSFET (Metal Oxide) |
Supplier Device Package | PG-TO263-3-2 |
Series | Automotive, AEC-Q101, OptiMOS™ |
Rds On (Max) @ Id, Vgs | 15.7mOhm @ 50A, 10V |
Power Dissipation (Max) | 100W (Tc) |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Package | Tape & Reel (TR) |
Operating Temperature | -55°C ~ 175°C (TJ) |
Product Attribute | Attribute Value |
---|---|
Mounting Type | Surface Mount |
Input Capacitance (Ciss) (Max) @ Vds | 4180 pF @ 25 V |
Gate Charge (Qg) (Max) @ Vgs | 57 nC @ 10 V |
FET Type | N-Channel |
FET Feature | - |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Drain to Source Voltage (Vdss) | 120 V |
Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
Base Product Number | IPB50N12 |
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