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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > IPB50R199CPATMA1
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IPB50R199CPATMA1

Manufacturer Part Number IPB50R199CPATMA1
Manufacturer Infineon Technologies
Detailed Description MOSFET N-CH 550V 17A TO263-3
Package PG-TO263-3-2
In Stock 68783 pcs
Data sheet Part Number GuideMult Dev Pkg Box Chg 3/Jan/2018
Reference Price (In US Dollars)
1000 2000 5000
$0.754 $0.717 $0.69
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Specifications

Product Attribute Attribute Value
Vgs(th) (Max) @ Id 3.5V @ 660µA
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
Supplier Device Package PG-TO263-3-2
Series CoolMOS™
Rds On (Max) @ Id, Vgs 199mOhm @ 9.9A, 10V
Power Dissipation (Max) 139W (Tc)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Package Tape & Reel (TR)
Operating Temperature -55°C ~ 150°C (TJ)
Product Attribute Attribute Value
Mounting Type Surface Mount
Input Capacitance (Ciss) (Max) @ Vds 1800 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs 45 nC @ 10 V
FET Type N-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 10V
Drain to Source Voltage (Vdss) 550 V
Current - Continuous Drain (Id) @ 25°C 17A (Tc)
Base Product Number IPB50R199

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IPB50R199CPATMA1 Datasheet PDF

Data sheet