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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > IPB025N10N3GE8187ATMA1
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IPB025N10N3GE8187ATMA1

Manufacturer Part Number IPB025N10N3GE8187ATMA1
Manufacturer Infineon Technologies
Detailed Description MOSFET N-CH 100V 180A TO263-7
Package PG-TO263-7
In Stock 40453 pcs
Data sheet Part Number GuideMult Dev Pkg Box Chg 3/Jan/2018
Reference Price (In US Dollars)
1000 2000
$1.087 $1.033
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Specifications

Product Attribute Attribute Value
Vgs(th) (Max) @ Id 3.5V @ 275µA
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
Supplier Device Package PG-TO263-7
Series OptiMOS™
Rds On (Max) @ Id, Vgs 2.5mOhm @ 100A, 10V
Power Dissipation (Max) 300W (Tc)
Package / Case TO-263-7, D²Pak (6 Leads + Tab)
Package Tape & Reel (TR)
Operating Temperature -55°C ~ 175°C (TJ)
Product Attribute Attribute Value
Mounting Type Surface Mount
Input Capacitance (Ciss) (Max) @ Vds 14800 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs 206 nC @ 10 V
FET Type N-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 180A (Tc)
Base Product Number IPB025

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IPB025N10N3GE8187ATMA1 Datasheet PDF

Data sheet

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