IPB017N10N5LFATMA1
Manufacturer Part Number | IPB017N10N5LFATMA1 |
---|---|
Manufacturer | Infineon Technologies |
Detailed Description | MOSFET N-CH 100V 180A TO263-7 |
Package | PG-TO263-7 |
In Stock | 17565 pcs |
Data sheet | Mult Dev Pkg Box Chg 3/Jan/2018Mult Dev Wafer Chgs 3/Nov/2022 |
Reference Price (In US Dollars)
1 | 10 | 100 | 500 |
---|---|---|---|
$3.357 | $3.031 | $2.509 | $2.185 |
Delivery Time
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RFQ Email: info@Components-House.net
RFQ Email: info@Components-House.net
Specifications
Product Attribute | Attribute Value |
---|---|
Vgs(th) (Max) @ Id | 4.1V @ 270µA |
Vgs (Max) | ±20V |
Technology | MOSFET (Metal Oxide) |
Supplier Device Package | PG-TO263-7 |
Series | OptiMOS™-5 |
Rds On (Max) @ Id, Vgs | 1.7mOhm @ 100A, 10V |
Power Dissipation (Max) | 313W (Tc) |
Package / Case | TO-263-7, D²Pak (6 Leads + Tab) |
Package | Tape & Reel (TR) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Product Attribute | Attribute Value |
---|---|
Mounting Type | Surface Mount |
Input Capacitance (Ciss) (Max) @ Vds | 840 pF @ 50 V |
Gate Charge (Qg) (Max) @ Vgs | 195 nC @ 10 V |
FET Type | N-Channel |
FET Feature | - |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Drain to Source Voltage (Vdss) | 100 V |
Current - Continuous Drain (Id) @ 25°C | 180A (Tc) |
Base Product Number | IPB017 |
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