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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > IPB009N03LGATMA1
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IPB009N03LGATMA1

Manufacturer Part Number IPB009N03LGATMA1
Manufacturer Infineon Technologies
Detailed Description MOSFET N-CH 30V 180A TO263-7
Package PG-TO263-7-3
In Stock 6518 pcs
Data sheet Part Number GuideMult Dev Pkg Box Chg 3/Jan/2018Mult Dev EOL 23/Mar/2022
Reference Price (In US Dollars)
Delivery Time Components-House.com is a Reliable Stocking Distributor of Electronic Parts. We specialize in all Infineon Technologies series electronic components. We have 6518 pieces of Infineon Technologies IPB009N03LGATMA1 in stock available now. Request a quote from electronics components distributor at Components-House.com, our sales team will contact you within 24 hours.
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Specifications

Product Attribute Attribute Value
Vgs(th) (Max) @ Id 2.2V @ 250µA
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
Supplier Device Package PG-TO263-7-3
Series OptiMOS™
Rds On (Max) @ Id, Vgs 0.95mOhm @ 100A, 10V
Power Dissipation (Max) 250W (Tc)
Package / Case TO-263-7, D²Pak (6 Leads + Tab)
Package Tape & Reel (TR)
Operating Temperature -55°C ~ 175°C (TJ)
Product Attribute Attribute Value
Mounting Type Surface Mount
Input Capacitance (Ciss) (Max) @ Vds 25000 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs 227 nC @ 10 V
FET Type N-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 180A (Tc)
Base Product Number IPB009

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IPB009N03LGATMA1 Datasheet PDF

Data sheet

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