IPB011N04NF2SATMA1
| Manufacturer Part Number | IPB011N04NF2SATMA1 |
|---|---|
| Manufacturer | Infineon Technologies |
| Detailed Description | TRENCH <= 40V |
| Package | PG-TO263-3 |
| In Stock | 51172 pcs |
| Data sheet |
Reference Price (In US Dollars)
| 1 | 10 | 100 |
|---|---|---|
| $1.242 | $1.117 | $0.915 |
Delivery Time
Components-House.com is a Reliable Stocking Distributor of Electronic Parts. We specialize in all Infineon Technologies series electronic components. We have 51172 pieces of Infineon Technologies IPB011N04NF2SATMA1 in stock available now. Request a quote from electronics components distributor at Components-House.com, our sales team will contact you within 24 hours.
RFQ Email: info@Components-House.net
RFQ Email: info@Components-House.net
Specifications
| Product Attribute | Attribute Value |
|---|---|
| Vgs(th) (Max) @ Id | 3.4V @ 249µA |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Supplier Device Package | PG-TO263-3 |
| Series | StrongIRFET™2 |
| Rds On (Max) @ Id, Vgs | 1.15mOhm @ 100A, 10V |
| Power Dissipation (Max) | 3.8W (Ta), 375W (Tc) |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Package | Tape & Reel (TR) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Product Attribute | Attribute Value |
|---|---|
| Mounting Type | Surface Mount |
| Input Capacitance (Ciss) (Max) @ Vds | 15000 pF @ 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 315 nC @ 10 V |
| FET Type | N-Channel |
| FET Feature | - |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Drain to Source Voltage (Vdss) | 40 V |
| Current - Continuous Drain (Id) @ 25°C | 43A (Ta), 201A (Tc) |
| Base Product Number | IPB011 |
Recommended Products
-
IPB011N04LGATMA1
MOSFET N-CH 40V 180A TO263-7Infineon Technologies -
IPB014N04NF2SATMA1
TRENCH <= 40VInfineon Technologies -
IPB009N03LGATMA1
MOSFET N-CH 30V 180A TO263-7Infineon Technologies -
IPB017N06N3GATMA1
MOSFET N-CH 60V 180A TO263-7Infineon Technologies -
IPB018N10N5ATMA1
TRENCH >=100VInfineon Technologies -
IPB011N04NGATMA1
MOSFET N-CH 40V 180A TO263-7Infineon Technologies -
IPB015N04NGATMA1
MOSFET N-CH 40V 120A D2PAKInfineon Technologies -
IPB015N06NF2SATMA1
TRENCH 40<-<100VInfineon Technologies -
IPB017N10N5LFATMA1
MOSFET N-CH 100V 180A TO263-7Infineon Technologies -
IPB016N08NF2SATMA1
TRENCH 40<-<100V PG-TO263-3Infineon Technologies -
IPB018N06NF2SATMA1
TRENCH 40<-<100VInfineon Technologies -
IPB014N06NATMA1
MOSFET N-CH 60V 34A/180A TO263-7Infineon Technologies -
IPB016N06L3GATMA1
MOSFET N-CH 60V 180A TO263-7Infineon Technologies -
IPB015N08N5ATMA1
MOSFET N-CH 80V 180A TO263-7Infineon Technologies -
IPB015N04LGATMA1
MOSFET N-CH 40V 120A D2PAKInfineon Technologies -
IPB013N06NF2SATMA1
TRENCH 40<-<100VInfineon Technologies -
IPB010N06NATMA1
MOSFET N-CH 60V 45A/180A TO263-7Infineon Technologies -
IPB017N08N5ATMA1
MOSFET N-CH 80V 120A D2PAKInfineon Technologies -
IPB012N04NF2SATMA1
TRENCH <= 40VInfineon Technologies -
IPB017N10N5ATMA1
MOSFET N-CH 100V 180A TO263-7Infineon Technologies