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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > BSC120N12LSGATMA1
Infineon Technologies

BSC120N12LSGATMA1

Manufacturer Part Number BSC120N12LSGATMA1
Manufacturer Infineon Technologies
Detailed Description TRENCH >=100V PG-TDSON-8
Package PG-TDSON-8
In Stock 109208 pcs
Data sheet Mult Dev Mould Chgs 22/Jun/2022Optimos Site/Mat Chgs 30/May/2022
Reference Price (In US Dollars)
1 10 100 500 1000 2000
$0.727 $0.653 $0.525 $0.431 $0.357 $0.333
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Specifications

Product Attribute Attribute Value
Vgs(th) (Max) @ Id 2.4V @ 72µA
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
Supplier Device Package PG-TDSON-8
Series OptiMOS™
Rds On (Max) @ Id, Vgs 12mOhm @ 34A, 10V
Power Dissipation (Max) 114W (Tc)
Package / Case 8-PowerTDFN
Package Tape & Reel (TR)
Product Attribute Attribute Value
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Input Capacitance (Ciss) (Max) @ Vds 4900 pF @ 60 V
Gate Charge (Qg) (Max) @ Vgs 51 nC @ 10 V
FET Type N-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Drain to Source Voltage (Vdss) 120 V
Current - Continuous Drain (Id) @ 25°C 10A (Ta), 68A (Tc)

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BSC120N12LSGATMA1 Datasheet PDF

Data sheet