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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > BSC110N06NS3GATMA1
Infineon Technologies

BSC110N06NS3GATMA1

Manufacturer Part Number BSC110N06NS3GATMA1
Manufacturer Infineon Technologies
Detailed Description MOSFET N-CH 60V 50A TDSON-8
Package PG-TDSON-8-5
In Stock 227596 pcs
Data sheet Part Number GuideMult Dev Reel Design Chg 2/Dec/2019Mult Dev Pkg Box Chg 3/Jan/2018Multiple Changes 09/Jul/2014OptiMOS Assembly Site Add 2/Jan/2018
Reference Price (In US Dollars)
1 10 100 500 1000 2000
$0.439 $0.393 $0.307 $0.253 $0.2 $0.187
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Specifications

Product Attribute Attribute Value
Vgs(th) (Max) @ Id 4V @ 23µA
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
Supplier Device Package PG-TDSON-8-5
Series OptiMOS™
Rds On (Max) @ Id, Vgs 11mOhm @ 50A, 10V
Power Dissipation (Max) 2.5W (Ta), 50W (Tc)
Package / Case 8-PowerTDFN
Package Tape & Reel (TR)
Operating Temperature -55°C ~ 150°C (TJ)
Product Attribute Attribute Value
Mounting Type Surface Mount
Input Capacitance (Ciss) (Max) @ Vds 2700 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs 33 nC @ 10 V
FET Type N-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 10V
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 50A (Tc)
Base Product Number BSC110

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BSC110N06NS3GATMA1 Datasheet PDF

Data sheet