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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > BSC160N10NS3GATMA1
Infineon Technologies

BSC160N10NS3GATMA1

Manufacturer Part Number BSC160N10NS3GATMA1
Manufacturer Infineon Technologies
Detailed Description MOSFET N-CH 100V 8.8A/42A TDSON
Package PG-TDSON-8-1
In Stock 152398 pcs
Data sheet Part Number GuideMult Dev Reel Design Chg 2/Dec/2019Mult Dev Pkg Box Chg 3/Jan/2018Multiple Changes 09/Jul/2014Assembly Site Update 26/Jul/2016
Reference Price (In US Dollars)
1 10 100 500 1000 2000
$0.572 $0.512 $0.399 $0.33 $0.26 $0.243
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Specifications

Product Attribute Attribute Value
Vgs(th) (Max) @ Id 3.5V @ 33µA
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
Supplier Device Package PG-TDSON-8-1
Series OptiMOS™
Rds On (Max) @ Id, Vgs 16mOhm @ 33A, 10V
Power Dissipation (Max) 60W (Tc)
Package / Case 8-PowerTDFN
Package Tape & Reel (TR)
Operating Temperature -55°C ~ 150°C (TJ)
Product Attribute Attribute Value
Mounting Type Surface Mount
Input Capacitance (Ciss) (Max) @ Vds 1700 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs 25 nC @ 10 V
FET Type N-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 8.8A (Ta), 42A (Tc)
Base Product Number BSC160

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BSC160N10NS3GATMA1 Datasheet PDF

Data sheet