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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > BSC190N12NS3GATMA1
Infineon Technologies

BSC190N12NS3GATMA1

Manufacturer Part Number BSC190N12NS3GATMA1
Manufacturer Infineon Technologies
Detailed Description MOSFET N-CH 120V 8.6A/44A TDSON
Package PG-TDSON-8-1
In Stock 131468 pcs
Data sheet Part Number GuideMult Dev Reel Design Chg 2/Dec/2019Mult Dev Pkg Box Chg 3/Jan/2018Assembly Site Add 20/Jun/2016Multiple Changes 09/Jul/2014
Reference Price (In US Dollars)
1 10 100 500 1000 2000
$0.692 $0.623 $0.501 $0.411 $0.341 $0.317
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Specifications

Product Attribute Attribute Value
Vgs(th) (Max) @ Id 4V @ 42µA
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
Supplier Device Package PG-TDSON-8-1
Series OptiMOS™
Rds On (Max) @ Id, Vgs 19mOhm @ 39A, 10V
Power Dissipation (Max) 69W (Tc)
Package / Case 8-PowerTDFN
Package Tape & Reel (TR)
Operating Temperature -55°C ~ 150°C (TJ)
Product Attribute Attribute Value
Mounting Type Surface Mount
Input Capacitance (Ciss) (Max) @ Vds 2300 pF @ 60 V
Gate Charge (Qg) (Max) @ Vgs 34 nC @ 10 V
FET Type N-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 10V
Drain to Source Voltage (Vdss) 120 V
Current - Continuous Drain (Id) @ 25°C 8.6A (Ta), 44A (Tc)
Base Product Number BSC190

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BSC190N12NS3GATMA1 Datasheet PDF

Data sheet