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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > BSB165N15NZ3GXUMA1
Infineon Technologies

BSB165N15NZ3GXUMA1

Manufacturer Part Number BSB165N15NZ3GXUMA1
Manufacturer Infineon Technologies
Detailed Description MOSFET N-CH 150V 9A/45A 2WDSON
Package MG-WDSON-2, CanPAK M™
In Stock 61191 pcs
Data sheet Part Number GuideMult Dev Reel Design Chg 2/Dec/2019Mult Dev Pkg Box Chg 3/Jan/2018Mult Dev A/T Add 31/Jan/2023
Reference Price (In US Dollars)
1 10 100 500 1000 2000
$1.361 $1.221 $1.001 $0.852 $0.718 $0.682
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Specifications

Product Attribute Attribute Value
Vgs(th) (Max) @ Id 4V @ 110µA
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
Supplier Device Package MG-WDSON-2, CanPAK M™
Series OptiMOS™
Rds On (Max) @ Id, Vgs 16.5mOhm @ 30A, 10V
Power Dissipation (Max) 2.8W (Ta), 78W (Tc)
Package / Case 3-WDSON
Package Tape & Reel (TR)
Operating Temperature -40°C ~ 150°C (TJ)
Product Attribute Attribute Value
Mounting Type Surface Mount
Input Capacitance (Ciss) (Max) @ Vds 2800 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs 35 nC @ 10 V
FET Type N-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 8V, 10V
Drain to Source Voltage (Vdss) 150 V
Current - Continuous Drain (Id) @ 25°C 9A (Ta), 45A (Tc)
Base Product Number BSB165

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BSB165N15NZ3GXUMA1 Datasheet PDF

Data sheet