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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > BSB056N10NN3GXUMA1
Infineon Technologies

BSB056N10NN3GXUMA1

Manufacturer Part Number BSB056N10NN3GXUMA1
Manufacturer Infineon Technologies
Detailed Description MOSFET N-CH 100V 9A/83A 2WDSON
Package MG-WDSON-2, CanPAK M™
In Stock 51729 pcs
Data sheet Part Number GuideMult Dev Reel Design Chg 2/Dec/2019Mult Dev Pkg Box Chg 3/Jan/2018Mult Dev A/T Add 31/Jan/2023
Reference Price (In US Dollars)
1 10 100 500 1000 2000
$1.528 $1.373 $1.125 $0.958 $0.808 $0.767
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Specifications

Product Attribute Attribute Value
Vgs(th) (Max) @ Id 3.5V @ 100µA
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
Supplier Device Package MG-WDSON-2, CanPAK M™
Series OptiMOS™
Rds On (Max) @ Id, Vgs 5.6mOhm @ 30A, 10V
Power Dissipation (Max) 2.8W (Ta), 78W (Tc)
Package / Case 3-WDSON
Package Tape & Reel (TR)
Operating Temperature -40°C ~ 150°C (TJ)
Product Attribute Attribute Value
Mounting Type Surface Mount
Input Capacitance (Ciss) (Max) @ Vds 5500 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs 74 nC @ 10 V
FET Type N-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 9A (Ta), 83A (Tc)
Base Product Number BSB056

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BSB056N10NN3GXUMA1 Datasheet PDF

Data sheet