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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > BSB015N04NX3GXUMA1
Infineon Technologies

BSB015N04NX3GXUMA1

Manufacturer Part Number BSB015N04NX3GXUMA1
Manufacturer Infineon Technologies
Detailed Description MOSFET N-CH 40V 36A/180A 2WDSON
Package MG-WDSON-2, CanPAK M™
In Stock 5006 pcs
Data sheet Part Number GuideMult Dev Reel Design Chg 2/Dec/2019Mult Dev Pkg Box Chg 3/Jan/2018Multiple Devices 12/May/2009Mult Dev EOL 14/Dec/2020
Reference Price (In US Dollars)
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Specifications

Product Attribute Attribute Value
Vgs(th) (Max) @ Id 4V @ 250µA
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
Supplier Device Package MG-WDSON-2, CanPAK M™
Series OptiMOS™
Rds On (Max) @ Id, Vgs 1.5mOhm @ 30A, 10V
Power Dissipation (Max) 2.8W (Ta), 89W (Tc)
Package / Case 3-WDSON
Package Tape & Reel (TR)
Product Attribute Attribute Value
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Surface Mount
Input Capacitance (Ciss) (Max) @ Vds 12000 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs 142 nC @ 10 V
FET Type N-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 10V
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 36A (Ta), 180A (Tc)

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BSB015N04NX3GXUMA1 Datasheet PDF

Data sheet