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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > BSB165N15NZ3G
Infineon Technologies

BSB165N15NZ3G

Manufacturer Part Number BSB165N15NZ3G
Manufacturer Infineon Technologies
Detailed Description BSB165N15 - 12V-300V N-CHANNEL P
Package MG-WDSON-2-9
In Stock 51198 pcs
Data sheet
Reference Price (In US Dollars)
156
$0.77
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Specifications

Product Attribute Attribute Value
Vgs(th) (Max) @ Id 4V @ 110µA
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
Supplier Device Package MG-WDSON-2-9
Series OptiMOS®
Rds On (Max) @ Id, Vgs 16.5mOhm @ 30A, 10V
Power Dissipation (Max) 2.8W (Ta), 78W (Tc)
Package / Case DirectFET™ Isometric MZ
Package Bulk
Product Attribute Attribute Value
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Surface Mount
Input Capacitance (Ciss) (Max) @ Vds 2800 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs 35 nC @ 10 V
FET Type N-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 8V, 10V
Drain to Source Voltage (Vdss) 150 V
Current - Continuous Drain (Id) @ 25°C 9A (Ta), 45A (Tc)

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BSB165N15NZ3G Datasheet PDF

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