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Home > Products > Discrete Semiconductor Products > Diodes - Rectifiers - Single > NXPSC06650DJ
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NXPSC06650DJ

Manufacturer Part Number NXPSC06650DJ
Manufacturer WeEn Semiconductors
Detailed Description DIODE SIL CARBIDE 650V 6A DPAK
Package DPAK
In Stock 4860 pcs
Data sheet NXPSC06650DAll Device Label Chg 14/Feb/2020Diodes 1-20-23Adv Status Notice 28/Sep/2018Mult Dev Wafer Status 28/Sep/2018
Reference Price (In US Dollars)
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Specifications

Product Attribute Attribute Value
Voltage - Forward (Vf) (Max) @ If 1.7 V @ 6 A
Voltage - DC Reverse (Vr) (Max) 650 V
Technology SiC (Silicon Carbide) Schottky
Supplier Device Package DPAK
Speed No Recovery Time > 500mA (Io)
Series -
Reverse Recovery Time (trr) 0 ns
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Product Attribute Attribute Value
Package Tape & Reel (TR)
Operating Temperature - Junction 175°C (Max)
Mounting Type Surface Mount
Current - Reverse Leakage @ Vr 200 µA @ 650 V
Current - Average Rectified (Io) 6A
Capacitance @ Vr, F 190pF @ 1V, 1MHz
Base Product Number NXPSC

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NXPSC06650DJ Datasheet PDF

Data sheet