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Home > Products > Discrete Semiconductor Products > Diodes - Rectifiers - Single > NXPSC04650BJ
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NXPSC04650BJ

Manufacturer Part Number NXPSC04650BJ
Manufacturer WeEn Semiconductors
Detailed Description DIODE SIL CARBIDE 650V 4A D2PAK
Package D2PAK
In Stock 4950 pcs
Data sheet NXPSC04650BAll Device Label Chg 14/Feb/2020Diodes 1-20-23Adv Status Notice 28/Sep/2018Mult Dev Wafer Status 28/Sep/2018
Reference Price (In US Dollars)
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Specifications

Product Attribute Attribute Value
Voltage - Forward (Vf) (Max) @ If 1.7 V @ 4 A
Voltage - DC Reverse (Vr) (Max) 650 V
Technology SiC (Silicon Carbide) Schottky
Supplier Device Package D2PAK
Speed No Recovery Time > 500mA (Io)
Series -
Reverse Recovery Time (trr) 0 ns
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Product Attribute Attribute Value
Package Tape & Reel (TR)
Operating Temperature - Junction 175°C (Max)
Mounting Type Surface Mount
Current - Reverse Leakage @ Vr 170 µA @ 650 V
Current - Average Rectified (Io) 4A
Capacitance @ Vr, F 130pF @ 1V, 1MHz
Base Product Number NXPSC

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NXPSC04650BJ Datasheet PDF

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