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Home > Products > Discrete Semiconductor Products > Diodes - Rectifiers - Single > NXPLQSC30650WQ
WeEn Semiconductors

NXPLQSC30650WQ

Manufacturer Part Number NXPLQSC30650WQ
Manufacturer WeEn Semiconductors
Detailed Description DIODE SIL CARB 650V 30A TO247-3
Package TO-247-3
In Stock 3952 pcs
Data sheet All Device Label Chg 14/Feb/2020Diodes 1-20-23Adv Status Notice 28/Sep/2018Mult Dev Wafer Status 28/Sep/2018NXPLQSC30650W
Reference Price (In US Dollars)
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Specifications

Product Attribute Attribute Value
Voltage - Forward (Vf) (Max) @ If 1.95 V @ 15 A
Voltage - DC Reverse (Vr) (Max) 650 V
Technology SiC (Silicon Carbide) Schottky
Supplier Device Package TO-247-3
Speed No Recovery Time > 500mA (Io)
Series -
Reverse Recovery Time (trr) 0 ns
Package / Case TO-247-3
Product Attribute Attribute Value
Package Bulk
Operating Temperature - Junction 175°C (Max)
Mounting Type Through Hole
Current - Reverse Leakage @ Vr 250 µA @ 650 V
Current - Average Rectified (Io) 30A
Capacitance @ Vr, F 300pF @ 1V, 1MHz
Base Product Number NXPLQSC

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