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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Arrays > SIZ200DT-T1-GE3
Vishay Siliconix

SIZ200DT-T1-GE3

Manufacturer Part Number SIZ200DT-T1-GE3
Manufacturer Vishay Siliconix
Detailed Description MOSFET N-CH DUAL 30V
Package 8-PowerPair® (3.3x3.3)
In Stock 216301 pcs
Data sheet SIZ200DT
Reference Price (In US Dollars)
1 10 100 500 1000
$0.393 $0.351 $0.274 $0.226 $0.178
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Specifications

Product Attribute Attribute Value
Vgs(th) (Max) @ Id 2.4V @ 250µA
Technology MOSFET (Metal Oxide)
Supplier Device Package 8-PowerPair® (3.3x3.3)
Series TrenchFET® Gen IV
Rds On (Max) @ Id, Vgs 5.5mOhm @ 10A, 10V, 5.8mOhm @ 10A, 10V
Power - Max 4.3W (Ta), 33W (Tc)
Package / Case 8-PowerWDFN
Package Tape & Reel (TR)
Operating Temperature -55°C ~ 150°C (TJ)
Product Attribute Attribute Value
Mounting Type Surface Mount
Input Capacitance (Ciss) (Max) @ Vds 1510pF @ 15V, 1600pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 28nC @ 10V, 30nC @ 10V
FET Feature -
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 22A (Ta), 61A (Tc), 22A (Ta), 60A (Tc)
Configuration 2 N-Channel (Dual)
Base Product Number SIZ200

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SIZ200DT-T1-GE3 Datasheet PDF

Data sheet