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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Arrays > SIZ910DT-T1-GE3
Vishay Siliconix

SIZ910DT-T1-GE3

Manufacturer Part Number SIZ910DT-T1-GE3
Manufacturer Vishay Siliconix
Detailed Description MOSFET 2N-CH 30V 40A POWERPAIR
Package 8-PowerPair® (6x5)
In Stock 4506 pcs
Data sheet Mult Devices 15/Sep/2017Multiple Fabracation Changes09/Jul/2014SiZ901DT
Reference Price (In US Dollars)
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Specifications

Product Attribute Attribute Value
Vgs(th) (Max) @ Id 2.2V @ 250µA
Technology MOSFET (Metal Oxide)
Supplier Device Package 8-PowerPair® (6x5)
Series TrenchFET®
Rds On (Max) @ Id, Vgs 5.8mOhm @ 20A, 10V
Power - Max 48W, 100W
Package / Case 8-PowerWDFN
Package Tape & Reel (TR)
Operating Temperature -55°C ~ 150°C (TJ)
Product Attribute Attribute Value
Mounting Type Surface Mount
Input Capacitance (Ciss) (Max) @ Vds 1500pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 40nC @ 10V
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 40A
Configuration 2 N-Channel (Half Bridge)
Base Product Number SIZ910

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SIZ910DT-T1-GE3 Datasheet PDF

Data sheet

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