SIZ998BDT-T1-GE3
| Manufacturer Part Number | SIZ998BDT-T1-GE3 |
|---|---|
| Manufacturer | Vishay Siliconix |
| Detailed Description | DUAL N-CHANNEL 30-V (D-S) MOSFET |
| Package | 8-PowerPair® (6x5) |
| In Stock | 204221 pcs |
| Data sheet |
Reference Price (In US Dollars)
| 1 | 10 | 100 | 500 | 1000 |
|---|---|---|---|---|
| $0.385 | $0.344 | $0.268 | $0.221 | $0.175 |
Delivery Time
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Specifications
| Product Attribute | Attribute Value |
|---|---|
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Technology | MOSFET (Metal Oxide) |
| Supplier Device Package | 8-PowerPair® (6x5) |
| Series | TrenchFET® Gen IV |
| Rds On (Max) @ Id, Vgs | 4.39mOhm @ 15A, 10V, 2.4mOhm @ 19A, 10V |
| Power - Max | 3.8W (Ta), 20W (Tc), 4.8W (Ta), 32.9W (Tc) |
| Package / Case | 8-PowerWDFN |
| Package | Tape & Reel (TR) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Product Attribute | Attribute Value |
|---|---|
| Mounting Type | Surface Mount |
| Input Capacitance (Ciss) (Max) @ Vds | 790pF @ 15V, 2130pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs | 18nC @ 10V, 46.7nC @ 10V |
| FET Feature | - |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 23.7A (Ta), 54.8A (Tc), 36.2A (Ta), 94.6A (Tc) |
| Configuration | 2 N-Channel (Dual), Schottky |
| Base Product Number | SIZ998 |
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