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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > SIHU6N62E-GE3
Vishay Siliconix

SIHU6N62E-GE3

Manufacturer Part Number SIHU6N62E-GE3
Manufacturer Vishay Siliconix
Detailed Description MOSFET N-CH 620V 6A IPAK
Package IPAK (TO-251)
In Stock 156421 pcs
Data sheet SIL-079-2014-Rev-0 26/Sep/2014SIHU6N62E-GE3
Reference Price (In US Dollars)
1 10 100 500 1000 2000 5000 10000
$0.634 $0.567 $0.442 $0.365 $0.288 $0.269 $0.256 $0.246
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Specifications

Product Attribute Attribute Value
Vgs(th) (Max) @ Id 4V @ 250µA
Vgs (Max) ±30V
Technology MOSFET (Metal Oxide)
Supplier Device Package IPAK (TO-251)
Series -
Rds On (Max) @ Id, Vgs 900mOhm @ 3A, 10V
Power Dissipation (Max) 78W (Tc)
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Package Tube
Operating Temperature -55°C ~ 150°C (TJ)
Product Attribute Attribute Value
Mounting Type Through Hole
Input Capacitance (Ciss) (Max) @ Vds 578 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs 34 nC @ 10 V
FET Type N-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 10V
Drain to Source Voltage (Vdss) 620 V
Current - Continuous Drain (Id) @ 25°C 6A (Tc)
Base Product Number SIHU6

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SIHU6N62E-GE3 Datasheet PDF

Data sheet