SIHU2N80AE-GE3
| Manufacturer Part Number | SIHU2N80AE-GE3 |
|---|---|
| Manufacturer | Vishay Siliconix |
| Detailed Description | MOSFET N-CH 800V 2.9A TO251AA |
| Package | TO-251AA |
| In Stock | 304602 pcs |
| Data sheet |
Reference Price (In US Dollars)
| 1 | 10 | 100 | 500 | 1000 | 2000 | 5000 | 10000 |
|---|---|---|---|---|---|---|---|
| $0.367 | $0.327 | $0.254 | $0.21 | $0.166 | $0.155 | $0.147 | $0.142 |
Delivery Time
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RFQ Email: info@Components-House.net
Specifications
| Product Attribute | Attribute Value |
|---|---|
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Vgs (Max) | ±30V |
| Technology | MOSFET (Metal Oxide) |
| Supplier Device Package | TO-251AA |
| Series | E |
| Rds On (Max) @ Id, Vgs | 2.9Ohm @ 500mA, 10V |
| Power Dissipation (Max) | 62.5W (Tc) |
| Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
| Package | Tube |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Product Attribute | Attribute Value |
|---|---|
| Mounting Type | Through Hole |
| Input Capacitance (Ciss) (Max) @ Vds | 180 pF @ 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 10.5 nC @ 10 V |
| FET Type | N-Channel |
| FET Feature | - |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Drain to Source Voltage (Vdss) | 800 V |
| Current - Continuous Drain (Id) @ 25°C | 2.9A (Tc) |
| Base Product Number | SIHU2 |
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