SIHP6N65E-GE3
Manufacturer Part Number | SIHP6N65E-GE3 |
---|---|
Manufacturer | Vishay Siliconix |
Detailed Description | MOSFET N-CH 650V 7A TO220AB |
Package | TO-220AB |
In Stock | 86875 pcs |
Data sheet | Mult Dev Material Chg 30/Aug/2019SIHP6N65E |
Reference Price (In US Dollars)
1000 |
---|
$0.411 |
Delivery Time
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Specifications
Product Attribute | Attribute Value |
---|---|
Vgs(th) (Max) @ Id | 4V @ 250µA |
Vgs (Max) | ±30V |
Technology | MOSFET (Metal Oxide) |
Supplier Device Package | TO-220AB |
Series | - |
Rds On (Max) @ Id, Vgs | 600mOhm @ 3A, 10V |
Power Dissipation (Max) | 78W (Tc) |
Package / Case | TO-220-3 |
Package | Tube |
Operating Temperature | -55°C ~ 150°C (TJ) |
Product Attribute | Attribute Value |
---|---|
Mounting Type | Through Hole |
Input Capacitance (Ciss) (Max) @ Vds | 820 pF @ 100 V |
Gate Charge (Qg) (Max) @ Vgs | 48 nC @ 10 V |
FET Type | N-Channel |
FET Feature | - |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Drain to Source Voltage (Vdss) | 650 V |
Current - Continuous Drain (Id) @ 25°C | 7A (Tc) |
Base Product Number | SIHP6 |
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