SIHD6N80E-GE3
Manufacturer Part Number | SIHD6N80E-GE3 |
---|---|
Manufacturer | Vishay Siliconix |
Detailed Description | MOSFET N-CH 800V 5.4A DPAK |
Package | TO-252AA |
In Stock | 142327 pcs |
Data sheet | SIHD6N80E |
Reference Price (In US Dollars)
1 | 10 | 100 | 500 | 1000 | 2000 | 5000 | 10000 |
---|---|---|---|---|---|---|---|
$0.745 | $0.668 | $0.537 | $0.441 | $0.366 | $0.34 | $0.328 | $0.319 |
Delivery Time
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Specifications
Product Attribute | Attribute Value |
---|---|
Vgs(th) (Max) @ Id | 4V @ 250µA |
Vgs (Max) | ±30V |
Technology | MOSFET (Metal Oxide) |
Supplier Device Package | TO-252AA |
Series | E |
Rds On (Max) @ Id, Vgs | 940mOhm @ 3A, 10V |
Power Dissipation (Max) | 78W (Tc) |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Package | Bulk |
Operating Temperature | -55°C ~ 150°C (TJ) |
Product Attribute | Attribute Value |
---|---|
Mounting Type | Surface Mount |
Input Capacitance (Ciss) (Max) @ Vds | 827 pF @ 100 V |
Gate Charge (Qg) (Max) @ Vgs | 44 nC @ 10 V |
FET Type | N-Channel |
FET Feature | - |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Drain to Source Voltage (Vdss) | 800 V |
Current - Continuous Drain (Id) @ 25°C | 5.4A (Tc) |
Base Product Number | SIHD6 |
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