SIE854DF-T1-GE3
| Manufacturer Part Number | SIE854DF-T1-GE3 |
|---|---|
| Manufacturer | Vishay Siliconix |
| Detailed Description | MOSFET N-CH 100V 60A 10POLARPAK |
| Package | 10-PolarPAK® (L) |
| In Stock | 6266 pcs |
| Data sheet | PCN- SIL-0582013 05/Dec/2013SIE854DF |
Reference Price (In US Dollars)
Delivery Time
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Specifications
| Product Attribute | Attribute Value |
|---|---|
| Vgs(th) (Max) @ Id | 4.4V @ 250µA |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Supplier Device Package | 10-PolarPAK® (L) |
| Series | TrenchFET® |
| Rds On (Max) @ Id, Vgs | 14.2mOhm @ 13.2A, 10V |
| Power Dissipation (Max) | 5.2W (Ta), 125W (Tc) |
| Package / Case | 10-PolarPAK® (L) |
| Package | Tape & Reel (TR) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Product Attribute | Attribute Value |
|---|---|
| Mounting Type | Surface Mount |
| Input Capacitance (Ciss) (Max) @ Vds | 3100 pF @ 50 V |
| Gate Charge (Qg) (Max) @ Vgs | 75 nC @ 10 V |
| FET Type | N-Channel |
| FET Feature | - |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Drain to Source Voltage (Vdss) | 100 V |
| Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
| Base Product Number | SIE854 |
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