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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > SIE816DF-T1-GE3
Vishay Siliconix

SIE816DF-T1-GE3

Manufacturer Part Number SIE816DF-T1-GE3
Manufacturer Vishay Siliconix
Detailed Description MOSFET N-CH 60V 60A 10POLARPAK
Package 10-PolarPAK® (L)
In Stock 4867 pcs
Data sheet SIE816DF
Reference Price (In US Dollars)
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Specifications

Product Attribute Attribute Value
Vgs(th) (Max) @ Id 4.4V @ 250µA
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
Supplier Device Package 10-PolarPAK® (L)
Series TrenchFET®
Rds On (Max) @ Id, Vgs 7.4mOhm @ 19.8A, 10V
Power Dissipation (Max) 5.2W (Ta), 125W (Tc)
Package / Case 10-PolarPAK® (L)
Package Tape & Reel (TR)
Operating Temperature -55°C ~ 150°C (TJ)
Product Attribute Attribute Value
Mounting Type Surface Mount
Input Capacitance (Ciss) (Max) @ Vds 3100 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs 77 nC @ 10 V
FET Type N-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 10V
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 60A (Tc)
Base Product Number SIE816

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SIE816DF-T1-GE3 Datasheet PDF

Data sheet

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