SIE810DF-T1-GE3
Manufacturer Part Number | SIE810DF-T1-GE3 |
---|---|
Manufacturer | Vishay Siliconix |
Detailed Description | MOSFET N-CH 20V 60A 10POLARPAK |
Package | 10-PolarPAK® (L) |
In Stock | 57629 pcs |
Data sheet | SIE810DFWafer Site 12/Sep/2018 |
Reference Price (In US Dollars)
1 | 10 | 100 | 500 | 1000 |
---|---|---|---|---|
$1.398 | $1.256 | $1.029 | $0.876 | $0.739 |
Delivery Time
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Specifications
Product Attribute | Attribute Value |
---|---|
Vgs(th) (Max) @ Id | 2V @ 250µA |
Vgs (Max) | ±12V |
Technology | MOSFET (Metal Oxide) |
Supplier Device Package | 10-PolarPAK® (L) |
Series | TrenchFET® |
Rds On (Max) @ Id, Vgs | 1.4mOhm @ 25A, 10V |
Power Dissipation (Max) | 5.2W (Ta), 125W (Tc) |
Package / Case | 10-PolarPAK® (L) |
Package | Tape & Reel (TR) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Product Attribute | Attribute Value |
---|---|
Mounting Type | Surface Mount |
Input Capacitance (Ciss) (Max) @ Vds | 13000 pF @ 10 V |
Gate Charge (Qg) (Max) @ Vgs | 300 nC @ 10 V |
FET Type | N-Channel |
FET Feature | - |
Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 10V |
Drain to Source Voltage (Vdss) | 20 V |
Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
Base Product Number | SIE810 |
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