SIA425EDJ-T1-GE3
Manufacturer Part Number | SIA425EDJ-T1-GE3 |
---|---|
Manufacturer | Vishay Siliconix |
Detailed Description | MOSFET P-CH 20V 4.5A PPAK SC70-6 |
Package | PowerPAK® SC-70-6 |
In Stock | 4699 pcs |
Data sheet | SIA425EDJMultiple Devices 14/Mar/2018 |
Reference Price (In US Dollars)
Delivery Time
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Specifications
Product Attribute | Attribute Value |
---|---|
Vgs(th) (Max) @ Id | 1V @ 250µA |
Vgs (Max) | ±12V |
Technology | MOSFET (Metal Oxide) |
Supplier Device Package | PowerPAK® SC-70-6 |
Series | TrenchFET® |
Rds On (Max) @ Id, Vgs | 60mOhm @ 4.2A, 4.5V |
Power Dissipation (Max) | 2.9W (Ta), 15.6W (Tc) |
Package / Case | PowerPAK® SC-70-6 |
Package | Tape & Reel (TR) |
Product Attribute | Attribute Value |
---|---|
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
FET Type | P-Channel |
FET Feature | - |
Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
Drain to Source Voltage (Vdss) | 20 V |
Current - Continuous Drain (Id) @ 25°C | 4.5A (Tc) |
Base Product Number | SIA425 |
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