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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > SIA439EDJ-T1-GE3
Vishay Siliconix

SIA439EDJ-T1-GE3

Manufacturer Part Number SIA439EDJ-T1-GE3
Manufacturer Vishay Siliconix
Detailed Description MOSFET P-CH 20V 28A PPAK SC70-6
Package PowerPAK® SC-70-6
In Stock 3814 pcs
Data sheet Mult Mosfet EOL 30/Aug/2018Multiple Devices 11/Dec/2015SIA439EDJ
Reference Price (In US Dollars)
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Specifications

Product Attribute Attribute Value
Vgs(th) (Max) @ Id 1V @ 250µA
Vgs (Max) ±8V
Technology MOSFET (Metal Oxide)
Supplier Device Package PowerPAK® SC-70-6
Series TrenchFET®
Rds On (Max) @ Id, Vgs 16.5mOhm @ 5A, 4.5V
Power Dissipation (Max) 3.5W (Ta), 19W (Tc)
Package / Case PowerPAK® SC-70-6
Package Tape & Reel (TR)
Operating Temperature -50°C ~ 150°C (TJ)
Product Attribute Attribute Value
Mounting Type Surface Mount
Input Capacitance (Ciss) (Max) @ Vds 2410 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs 69 nC @ 8 V
FET Type P-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 28A (Tc)
Base Product Number SIA439

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SIA439EDJ-T1-GE3 Datasheet PDF

Data sheet

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